MRFE6S9046NR1 MRFE6S9046GNR1
3
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances
(In Freescale GSM EDGE Reference Design Test Fixture, 50 ohm system) V
DD
= 28 Vdc, IDQ
= 300
mA, 920-960
MHz
Bandwidth
Pout
@ 1 dB Compression Point
P1dB
?
45
?
W
IMD Symmetry @ 44
W PEP, Pout
where IMD Third Order
30 dBc
Intermodulation
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
?
55
?
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
?
65
?
MHz
Gain Flatness in 40
MHz Bandwidth @ Pout
= 35.5
W CW
GF
?
0.2
?
dB
Average Deviation from Linear Phase in 40
MHz Bandwidth
@ Pout
= 45
W CW
Φ
?
0.9
?
°
Average Group Delay @ Pout
= 45
W CW, f = 940 MHz
Delay
?
3.1
?
ns
Part-to-Part Insertion Phase Variation @ Pout
= 45
W CW,
f = 940 MHz, Six Sigma Window
ΔΦ
?
20
?
°
Gain Variation over Temperature
(-30°C to +85°C)
ΔG
?
0.021
?
dB/°C
Output Power Variation over Temperature
(-30°C to +85°C)
ΔP1dB
?
0.006
?
dBm/°C
Typical GSM EDGE Performances
(In Freescale GSM EDGE Reference Design Test Fixture, 50 ohm system) V
DD
= 28 Vdc, IDQ
= 285 mA,
Pout
= 17.8 W Avg., 920-960 MHz EDGE Modulation
Power Gain
Gps
?
19
?
dB
Drain Efficiency
ηD
?
42.5
?
%
Error Vector Magnitude
EVM
?
2.1
?
% rms
Spectral Regrowth at 400 kHz Offset
SR1
?
-62.5
?
dBc
Spectral Regrowth at 600 kHz Offset
SR2
?
-72
?
dBc
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MRFE6S9060NR1
MOSFET RF N-CH 14W TO270-2
MRFE6S9125NR1
MOSFET RF N-CH 27W TO-270-4
MRFE6S9130HSR5
MOSFET RF N-CH 27W NI-780S
MRFE6S9135HSR5
MOSFET RF N-CH 39W 28V NI-880S
MRFE6S9160HSR5
MOSFET RF N-CH 35W 28V NI-780S
MRFE6S9200HSR5
MOSFET RF N-CH 58W 28V NI-880S
MRFE6S9201HSR5
MOSFET RF N-CH 40W 28V NI-780S
MRFE6S9205HSR5
MOSFET RF N-CH 58W 28V NI-880S
相关代理商/技术参数
MRFE6S9060GNR1
功能描述:射频MOSFET电源晶体管 HV6E 60W TO 270-2GN FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9060NR1
功能描述:射频MOSFET电源晶体管 HV6E 60W TO270-2N FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9060NR1-CUT TAPE
制造商:Freescale 功能描述:MRFE6S9060 Series 880 MHz 14 W 28 V N-Channel RF Power MOSFET
MRFE6S9125NBR1
功能描述:射频MOSFET电源晶体管 HV6E 125W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9125NR1
功能描述:射频MOSFET电源晶体管 HV6E 125W
RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9130HR3
功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 130W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9130HR3_08
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRFE6S9130HR5
功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 130W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray